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ELEC97055 MEMS and Nanotechnology

Lecturer(s): Dr Zahid Durrani; Prof Andrew Holmes


To study the underlying physical principles, methods of fabrication and applications of a broad range of micro- and nano-scale devices and systems.

Learning Outcomes

Upon successful completion of this module, you will be able to: 1. Explain, estimate and compare the performance parameters of nano-scale devices, their applications and give an overview of the critical process parameters use in the technologies to fabricate them 2. Analyse & design a range of nano-structured devices using relevant mechanical/electrical engineering principles. 3. Analyse and design a range of MEMS devices using relevant mechanical and electrical engineering principles 4. Compare and contrast the fabrication techniques used in these two different applications


Introduction: microand nano-scale size domains; scaling of physical laws; MEMS materials and processes; MEMS devices and applications; nanostructures in semiconductors and metals; introduction to quantum effects in nanostructures; nanostructure applications; Fabrication Technologies: semiconductor materials; photolithography; doping; thin film growth and deposition; metallisation; wet and dry etching; silicon micromachining; metal MEMS processes; nanofabrication methods – submicron optical lithography; electron beam lithography; MEMS Sensors and Actuators: mechanics including elasticity, beam bending theory, membranes/plates; microactuators based on various principles e.g. electrothermal, electrostatic, electromagnetic, piezoelectric and SMA; actuator applications e.g. inkjet, electrical and optical switching; physical sensors e.g. acceleration, strain, flow; chemical sensors; Microfluidics: scaling laws for microfluidics; transport in micro-channels; microfluidic components e.g. filters, mixers/reactors, valves/controllers, pumps; Grown Nanostructures: Si nanowires and nanocrystals; carbon nanotubes; nanostructures in III-V materials; metal nanostructures; devices using grown nanostructures; Nanoelectronic Semiconductor Devices: the nano-scale MOSFET; short channel effects in a nano-MOSFET; ‘scaling’ of MOSFETs; scaling of semiconductor memory (FLASH and Random Access memory); bio-sensors; Quantum Devices in Nanostructures: electron tunnelling; quantum confinement effects; single-electron effects; ballistic transport; optical properties of nanostructures; quantum dots; quantum point contacts; single-electron transistor; single-electron memory and logic.
Exam Duration: 3:00hrs
Coursework contribution: 0%

Term: Spring

Closed or Open Book (end of year exam): Closed

Coursework Requirement:

Oral Exam Required (as final assessment): no

Prerequisite module(s): None required

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Book List: